High–low Kelvin probe force spectroscopy for measuring the interface state density

• Ryo Izumi,
• Masato Miyazaki,
• Yan Jun Li and
• Yasuhiro Sugawara

Beilstein J. Nanotechnol. 2023, 14, 175–189, doi:10.3762/bjnano.14.18

• actual semiconductor device evaluation, and there is a need to develop a method for obtaining such physical quantities. Here, we propose high–low Kelvin probe force spectroscopy (high–low KPFS), an electrostatic force spectroscopy method using high- and low-frequency AC bias voltages to measure the

• surfaces to confirm the dependence of the electrostatic force on the frequency of the AC bias voltage and obtain the interface state density. Keywords: high–low Kelvin probe force microscopy; high–low Kelvin probe force spectroscopy; interface state density; Kelvin probe force microscopy; Kelvin probe